A1015 A1015 Silicon PNP Epitaxial Transistor Description: The A1015 is designed for audio frequency general purpose amplifier applications and driver stage amplifier applications Features: Excellent hFE Linearity Complementary to C1815 Chip Appearance
Chip Size Chip Thickness Bonding Pad Size Front Metal Backside Metal Scribe line width Wafer Size Base Emitter 350umx350um 21020um 110umx110um 100umx100um Al Au(As) 40um 6 inch
Electrical Characteristics( Ta=25)
Characteristic Collector Cutoff Current Emitter Cutoff Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector Saturation Voltage Symbol ICBO IEBO BVCBO BVCEO BVEBO hFE VCE(sat) Test Condition VCB=-60V, IE=0 VEB=-5V, IC=0 IC=-0.1mA, IC=-1mA, IE=-0.1mA, VCE=-6V, IC=-2mA IC=-100mA,IB=-10mA -60 -50 -5.0 150 600 -0.30 V Min Max -0.1 -0.1 Unit uA uA V V V
May.2004
Version :0.0
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